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Journal Articles

Site-specific fragmentation of acetone adsorbates on Si(100) in the carbon 1s absorption edge

Sekiguchi, Tetsuhiro; Sekiguchi, Hiromi*; Baba, Yuji

Surface Science, 454-456, p.363 - 368, 2000/05

https://doi.org/10.1016/S0039-6028(00)00284-3
 Times Cited Count：23 Percentile：72.46(Chemistry, Physical)

no abstracts in English

Journal Articles

Epitaxial growth of rutile films on Si(100) substrates by thermal oxidation of evaporated titanium films in argon flux

Dai, Z.*; Naramoto, Hiroshi; Narumi, Kazumasa; Yamamoto, Shunya

Journal of Physics; Condensed Matter, 11(43), p.8511 - 8516, 1999/11

https://doi.org/10.1088/0953-8984/11/43/314
 Times Cited Count：11 Percentile：54.6(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Extremely high selectivity in fragmentation of (CH$$_{3}$$S)$$_{2}$$ on Si(100) following excitation of adsorbate or substrate core level

Sekiguchi, Tetsuhiro; Baba, Yuji; Li, Y.; Ali, M.

Photon Factory Activity Report 1998, Part B, P. 67, 1999/11

http://ccdb5fs.kek.jp/cgi-bin/img/tiff2gif?199923003+00097

no abstracts in English

Journal Articles

Site-specific fragmentation of acetone adsorbates on Si(100) by selective excitation of inequivalent carbons

Sekiguchi, Tetsuhiro; Sekiguchi, Hiromi*; Baba, Yuji

Photon Factory Activity Report 1998, Part B, P. 68, 1999/11

http://ccdb5fs.kek.jp/cgi-bin/img/tiff2gif?199923003+00098

no abstracts in English

Journal Articles

Site-specific fragmentation of acetone adsorbates by selective excitation of inequivalent carbons

Sekiguchi, Tetsuhiro; Sekiguchi, Hiromi*; Baba, Yuji

Atomic Collision Research in Japan, (25), p.82 - 83, 1999/00

no abstracts in English

Journal Articles

The Orientation of chemisorbed formate using ${it K}$-edge photoabsorption spectroscopy

Sekiguchi, Hiromi*; Sekiguchi, Tetsuhiro

Atomic Collision Research in Japan, No.24, p.116 - 117, 1998/11

no abstracts in English

Journal Articles

Polarization dependence of carbon K-edge NEXAFS spectra of formate on Si(100)

Sekiguchi, Hiromi*; Sekiguchi, Tetsuhiro

Photon Factory Activity Report 1998, Part B, P. 220, 1998/11

http://ccdb5fs.kek.jp/cgi-bin/img/tiff2gif?199823003+00238

no abstracts in English

Journal Articles

Formation of ultra-thin SiO$$_{2}$$ layer on Si(100) by thermal decomposition of silicon alkoxide

Baba, Yuji; Yamamoto, Hiroyuki; Sasaki, Teikichi

Photon Factory Activity Report, (14), P. 423, 1996/00

no abstracts in English

Journal Articles

Application of high-energy X-ray photoelectron spectroscopy using synchrotron-radiation to the depth profile analysis of ion implanted layer on Si(100) surface

Yamamoto, Hiroyuki; Baba, Yuji; Sasaki, Teikichi

Photon Factory Activity Report, (13), P. 352, 1995/00

no abstracts in English

Oral presentation

Study on adsorption reaction of CH$$_{3}$$Cl on Si(100)2$$times$$1 by means of SR-XPS

Tsukada, Chie; Yoshida, Hikaru; Okada, Michio*; Yoshigoe, Akitaka; Yaita, Tsuyoshi

no journal, , 

Cs in clay mineral will be easy to desorb as halide. We should investigate the desorption mechanism. The clay mineral is constructed mainly by oxide with Si and Al. Thus, Si substrate and CH$$^{3}$$Cl are selected as the reaction model materials. The final purpose is to reveal the reaction for CH$$^{3}$$Cl molecular beam on Cs/Si substrate by means of XPS with synchrotron radiation (SR-XPS). As the first step, the purpose in this study is to reveal the adsorption reaction for CH$$^{3}$$Cl molecular beam on Si(100)2$$times$$1 by means of SR-XPS. The CH$$^{3}$$Cl will adsorb at CH$$^{3}$$ and/or Cl group on the Si dimer atom, respectively.

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